This research program involved the investigation of several aspects of GaxInl-xAsy-Pl-y, grown by LPE, that are of importance to the potential use of this material for field effect transistors, transferred-electron oscillators, and other devices. Results obtained include: various electrical characteristics of the material; the observation that the GaInAsP-InP conduction band discontinuity was less than 60 meV for these junctions; the characteristics of some quaternary transferred electron oscillators; and the properties of anodic oxides grown on the quaternary.

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